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2μm窄线宽激光器 EP2000-DM-B Series

EP2000-DM-B是一个性价比高, 窄线宽,高度相干的激光光源.类似于DFB形式的**技术, 即:ridge waveguide technology and epistructure design is used to deliver an InP-based strained quantum-well laser diode source emitting at a wavelength of 2.0μm with high SMSR. The Discrete Mode laser diode chip is packaged in an industry standard, hermetically sealed 14 pin butterfly package with integrated optical isolator, thermo-electric cooler (TEC), monitor photodiode and thermistor.

Key Features

Applications

Excellent reliability

High performance gas sensing

Mode-Hop free tuning >2nm

Seed Laser

Integrated optical isolator

Narrow linewidth <2MHz

Optical and electrical characteristics: (T = 25°C)

PARAMETER

SYMBOL

MIN

TYP

MAX

UNIT

LASER DIODE

Output Power in Fibre

Pf

1.5

1.75

2

mW

Centre Wavelength

λcen

1950

2001

2150

nm

Threshold Current

Ith

-

20

40

mA

Operating Current

Iop

-

70

120

mA

Forward Voltage

Vf

-

1.3

1.6

V

Side Mode Suppression Ratio

SMSR

30

40

-

dB

Temperature Tuning Coefficient

-

0.1

-

nm/K

Current Tuning Coefficient

-

0.01

-

nm/mA

Quantum Efficiency

η

0.02

0.03

-

mW/mA

Optical Isolation

ISO

40

-

dB

MONITOR DIODE*

Monitor Photo Current

Im

0.2

0.4

0.8

mA

Monitor Operating Voltage

Vm

-

-

5.5

V

Monitor Dark Current (at 5V VDR)

Imd

-

-

< 0.2

μA

Absolute Maximum Ratings (Tsub= 25°C)

Parameter

Symbol

Ratings

Units

Laser diode reverse voltage

VR

2

V

Laser diode forward current

IF

120

mA

Photodiode reverse voltage

VDR

20

V

Peltier current

IP

1.2

A

Operating case temperature

Tcase

-20 to 65

°C

Storage temperature

Tstg

-40 to 85

°C

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