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BATOP激光芯片1064nm(Microchip)
品牌： BATOP
型号： MCT-1064-90ps
BATOP激光芯片1064nm(Microchip)
品牌： BATOP
型号： MCT-1064-90ps
BATOP GmbH成立于2003年，是一家隶属于德国耶拿大学的私人创新型公司。BATOP从事的专业领域包括：低温分子束外延技术，介质溅射镀膜，晶圆加工和芯片安装技术。在过去几年里， BATOP 已成为一个用于被动锁模激光器的可饱和吸收体的****的供应商。可饱和吸收产品集合了各式各样的不同的器件，从可饱和吸收镜(SAM™)，到可饱和输出镜(SOC)和用于透过应用的可饱和吸收体(SA)。迄今为止，可饱和吸收产品已经覆盖了800nm到2.6μm的常用激光波长范围。另一个产品系列是用于太赫兹发射和探测的太赫兹光电导天线(PCA)。BATOP不仅提供单带隙天线，还包括整合了微透镜的高能大狭缝交叉天线阵列和整套的太赫兹光谱仪。 太赫兹光电导天线的激发波长为800nm到1550nm之间。BATOP借助强大的研发能力来不断提高自己的产品， 我们始终和客户在一起，**的满足他们的需求。
产品介绍
Microchip激光芯片1064nm
The Microchip (MC) consists of a saturable absorber bonded with a Nd:YVO4 laser crystal. It can be used to generate pulsed laser radiation at 1064 nm wavelength if pumped with a diode laser at 808 nm using passively Q-switching.
The main advantage of a laser build with a microchip is the pump power dependent repetition rate with fixed pulse duration and pulse energy. By simply increasing the pump power at 808 nm the repetition rate - and consequently the average output power - will be increased proportionally starting from the laser threshold. The laser output is linear polarized.
MC - Microchip in reflection mode
MCT - Microchip in transmission mode
应用领域
微加工
光探测和测距（激光雷达）
精密测量
频率转换
MCT – 传输模式微芯片
The Nd:YVO4 laser crystal is bonded with a saturable output coupler (SOC).
The laser output beam is in the same direction as the pump beam.
The laser output is linear polarized.
Part No. | Delivery time | Description |
MCT-1064-90ps | 1 week | Microchip in transmission mode λ = 1064 nm， pulse duration ~ 90 ps， pulse energy ~ 100 nJ， repetition rate 20 kHz - 400 kHz pump wavelength 808 nm |
MCT-1064-220ps | 1 week | Microchip in transmission mode λ = 1064 nm， pulse duration ~ 220 ps， pulse energy ~ 160 nJ， repetition rate 20 kHz - 400 kHz pump wavelength 808 nm |
MCT-1064-90ps
Optical Pump Parameters
| Parameter at T=25°C | Min. | Typ. | Max. |
| Wavelength | 806 nm | 808 nm | 810 nm |
| Optical Pump Power Pp | 70 mW | 150 mW-200 mW | 300 mW |
| Pump Spot Diameter | 25 μm | 40 μm | 100 μm |
| Fluorescent Lifetime | 35 μs (3%) | ||
| Pump Absorption @ 808nm | 85% | 90% | 97，5% |
| Pump Power Density | 5.5 KW/cm2 | 24 KW/cm2* |
Lasing performance with 40μm pump spot size at 25°C
| Parameter at T=25°C | Min. | Typ. | Max. |
| Laser Emission Wavelength | 1064.0nm | 1064.3nm | 1064.6nm |
| Laser Wavelength Drift | 45 pm/100mW** | ||
| Beam Waist Diameter | 40 μm | 100 μm | |
| M2 | 1.1 | 1.3 | 1.5 |
| Pulse Energy | 75 nJ | 90 nJ | 105 nJ |
| Pulse Duration | 80 ps | 90 ps | 110 ps |
| Differential Efficiency | 10% | 20% | 25% |
| Lasing Threshold | 70 mW | 90 mW | 110 mW |
| Polarization Extinction Ratio | 30 | ||
| frep | 20 kHz | 400 kHz | |
| Pp (150mW) | 10 mW | 12 mW | 14 mW |
| Pp (200mW) | 17 mW | 20 mW | 23 mW |
Dependency of the average output power P on the pump power at 808 nm
Dependency of the repetition rate frep on the pump power at 808 nm
脉冲持续时间
脉冲频谱
Dependency of the relative frequency jitter on the repetition rate fR
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