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产品概述/Product Introduction:
♦ 直拉法晶体生长专用设备,可实现在高压、真空和保护气氛下直拉生长晶体
Special equipment for Czochralski crystal growth, which can realize Czochralski crystal growth under high pressure, vacuum and protective atmosphere
♦ 采用自动称重结构,在保证晶体品质的前提下实现了直拉晶体的自动生长过程
Adopting automatic weighing structure, the automatic growth process of Czochralski crystal is realized on the premise of ensuring crystal quality
产品特点/Product Characteristics:
♦ 高精度的传感器和控制软件
High precision sensor and control software
♦ 自动控制晶体外形
Automatic control of crystal shape
♦ **温度:2400℃
Maximum temperature: 2400℃
♦ 晶体尺寸:2-8英寸
crystal size: 2-8 inches
应用范围/Scope:
♦ 应用于氧化家(Ga₂O₃)单晶生长,SiC单晶、激光单晶生长
Applied to Gallium Oxide(Ga₂O₃)Single Crystal Growth, SiC Single Crystal Growth and Laser SingleCrystal Growth
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