产品概述/Product Introduction：

♦ 气相外延是一种单晶薄层生长方法

Vapor phase epitaxy is a single crystal thin layer growth method

♦ 气相外延广义上是化学气相沉积的一种特殊方式，其生长薄层的晶体结构是单晶衬底的延续，而且与衬底的晶向保持对应的关系

Vapor phase epitaxy is a special method of chemical vapor deposition in a broad sense, in which the crystal structure of the thin layer is a continuation of the single crystal substrate and keeps correspond-ing relationship with the crystal orientation of the substrate

♦ 在半导体科学技术的发展中，气相外延发挥了重要作用

In the development of semiconductor science and technology, gas phase epitaxy has played an import-ant role

♦ 砷化镓(GaAs) 气相外延技术生长的砷化镓(GaAs) 纯度高、电学特性好，广泛的应用于霍尔器件、耿氏二极管、场效应晶体管等微波器件中

Gallium arsenide (GaAs) grown by gas phase epitaxy technology has high purity and good electrical properties, and is widely used in Hall devices, Gunn diodes, field effect transistors and other microwave devices

产品特点/Product Characteristics：

♦ 本设备的生长室采用立式石英反应生长室。整个设备包括以下各分系统:反应生长室系统、加热系统、衬底支架传动系统、气路系统、水冷却系统、报警系统、气体供给与纯化系统、气动系统、控制系统

The growth chamber of this equipment adopts vertical quartz reaction growth chamber.The wholeequipment includes the following subsystems: reaction growth chamber system, heating system,substrate support transmission system, gas path system, water cooling system, alarm system, gassupply and purification system, pneumatic system and control system

♦ 旋转速度**可达3000转

The maximum rotation speed can reach 3000 revolutions

♦ 多坩埚转换

Multi-crucible conversion.

应用范围/Scope：

♦ 广泛的应用于霍尔器件、耿氏二极管、场效应晶体管等微波器件中

lt is widely used in Hall devices,Gunn diodes, field effect transistors and other microwave devices